73102tn (kt)/71598ha (kt)/40196ts (koto) 8-4689/3187at/d064mw/8182ki, ts no.1056-1/5 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp epitaxial planar silicon transistors high frequency amp applications ordering number:enn1056c 2sa1256 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan specifications absolute maximum ratings at ta = 25?c 0.4 0.95 0.95 1.9 2.9 0.5 1.5 2.5 0.5 0.16 0 to 0.1 0.8 1.1 2 3 1 electrical characteristics at ta = 25?c package dimensions unit:mm 2018b [2sa1256] applications ideally suited for use in fm rf amplifiers, mixers, oscillators, converters, and if amplifiers. features high f t (230mhz typ), and small cre (1.1pf typ). small nf (2.5db typ). 1 : base 2 : emitter 3 : collector sanyo : cp r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 3 Cv e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 0 2 Cv e g a t l o v e s a b - o t - r e t t i m ev o b e 5 Cv t n e r r u c r o t c e l l o ci c 0 3 Ca m n o i t a p i s s i d r o t c e l l o cp c 0 5 1w e r u t a r e p m e t n o i t c n u jj t 5 2 1 e r u t a r e p m e t e g a r o t sg t s t 5 2 1 + o t 5 5 C ?c ?c r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 0 1 ) C ( = e 0 =1 . 0 Ca t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 4 ) C ( = c 0 =1 . 0 Ca n i a g t n e r r u c c dh e f v e c i , v 6 ) C ( = c a m 1 ) C ( =* 0 6* 0 7 2 t c u d o r p h t d i w d n a b - n i a gf t v e c i , v 6 ) C ( = c a m 1 ) C ( =0 5 10 3 2z h m e c a t i c a p a c r e f s n a r t e s r e v e re r cv b c z h m 1 = f , v 6 C =1 . 17 . 1f p t n a t s n o c e m i t r o t c e l l o c - o t - e s a br b b c c , 'v e c i , v 6 C = c z h m 9 . 1 3 = f , a m 1 C =1 10 2s p e r u g i f e s i o nf nv e c i , v 6 C = c z h m 0 0 1 = f , a m 1 C =5 . 2b d n i a g e g a t l o vg pv e c i , v 6 C = c z h m 0 0 1 = f , a m 1 C =2 2b d * : the 2sa1256 is classified by 1ma h fe as follows : k n a r3 e4 e5 e h e f 0 2 1 o t 0 60 8 1 o t 0 90 8 1 o t 5 3 1 note : marking : e h fe rank : 3, 4, 5
no.1056-2/5 2sa1256 nf, pg test circuit l1 to 30pf v be v ce input 50 w l2 l3 to 22pf to 5pf output 50 w to 30pf to 22pf 0.01 m f 0.01 m f l1 : 1mm? plated wire 10mm? 5t, tap : 2t from v be side l2 : 1mm? plated wire 10mm? 7t, tap : 1t from v ce side l3 : 1mm? enamel wire 10mm? 3t itr03107 i c -- v ce 0 -- 2 -- 4 -- 6 -- 8 -- 10 0 -- 2 -- 4 -- 6 -- 8 -- 10 i b =0 itr03108 i b -- v be --1.0 --0.6 --0.8 --0.2 --0.4 0 0 --20 --40 --60 --80 --100 v ce = -- 6v --70 m a --60 m a --50 m a --40 m a --30 m a --20 m a --10 m a 1000 100 10 itr03109 h fe -- i c 2 3 57 3 7 25 3 5 2 -- 0.1 -- 1.0 -- 10 2 3 5 7 2 3 5 7 v ce = --12v --3v --6v -- 1.0 23 3 57 -- 10 5 2 7 100 5 7 1000 5 3 2 itr03110 f t -- i c v ce = --12v --3v --6v v ce = --3v --12v --6v 7 -- 1.0 23 -- 0.1 23 3 5 57 -- 10 5 2 1.0 7 10 5 3 2 7 5 3 2 2 itr03111 cre -- v cb f= 1mhz 7 -- 1.0 23 -- 0.1 23 3 5 57 -- 10 5 2 10 7 100 5 3 3 2 7 5 3 2 2 itr03112 r bb ' cc -- i c f= 31.9mhz collector current, i c ?a collector-to-emitter voltage, v ce ? collector-to-base voltage, v cb ? base current, i b a base-to-emitter voltage, v be ? dc current gain, h fe reverse transfer capacitance, cre pf base-to-collector time constant,r bb 'cc ps collector current, i c ma collector current, i c ?a collector current, i c ?a gain-bandwidth product, f t mhz
no.1056-3/5 2sa1256 itr03113 v ce (sat) -- i c 57 -- 1.0 2 -- 0.1 23 3535 7 -- 10 2 -- 0.1 7 7 -- 1.0 5 7 -- 10 5 3 3 5 3 2 2 i c / i b = 20 1 0 5 0 20 40 60 80 100 120 140 0 40 80 160 120 150 200 p c -- ta itr03114 collector current, i c ?a collector-to-emitter saturation voltage, v ce (sat) v collector dissipation, p c ?w ambient temperature, ta ?c input admittance, y ie -- i c g ie -- ms itr03115 -- 1.0 7 -- 10 7 23 5 5 2 3 5 0.1 2 3 5 7 7 2 1.0 c ie -- pf 2 3 5 10 2 3 7 7 5 2 100 f=1.0mhz v ce =--6v c ie g ie input admittance, y ie -- i c g ie -- ms itr03117 -- 1.0 7 -- 10 7 23 5 5 0.1 2 3 5 3 5 7 2 1.0 c ie -- pf 2 3 5 100 10 2 3 7 5 f=10mhz v ce =--6v c ie g ie input admittance, y ie -- i c g ie -- ms itr03119 -- 1.0 7 -- 10 7 23 35 5 1.0 2 3 5 3 5 7 2 10 7 100 c ie -- pf 2 3 5 10 1.0 2 3 7 100 7 5 output admittance, y oe -- i c g oe -- m s itr03116 -- 1.0 7 -- 10 7 23 5 5 1.0 2 3 5 3 5 7 2 10 c oe -- pf 1.0 2 3 7 5 3 5 2 10 f=1.0mhz v ce =--6v c oe g oe output admittance, y oe -- i c g oe -- m s itr03118 -- 1.0 7 -- 10 7 23 5 5 1.0 2 3 5 3 5 7 2 10 7 100 c oe -- pf 1.0 2 3 7 5 3 5 2 10 7 100 f=10mhz v ce =--6v c oe g oe output admittance, y oe -- i c g oe -- ms itr03120 -- 1.0 7 -- 10 7 23 35 5 0.1 2 3 5 3 5 7 2 1.0 c oe -- pf 0.1 2 3 7 5 3 5 2 1.0 f=100mhz v ce =--6v c oe g oe f=100mhz v ce =--6v c ie g ie collector current, i c ma collector current, i c ?a collector current, i c ma collector current, i c ?a collector current, i c ma collector current, i c ?a
no.1056-4/5 2sa1256 forward transfer admittance, y fe -- i c g fe -- m s itr03121 -- 1.0 7 -- 10 7 23 5 35 100 10 2 3 5 2 3 7 2 3 5 7 10 2 3 5 2 3 5 7 7 2 3 100 g fe -- b fe b fe -- m s f=100mhz v ce =--6v reverse transfer admittance, y re -- i c g re -- m s itr03122 -- 1.0 7 -- 10 7 23 5 35 1.0 0.1 2 3 5 2 3 7 3 5 7 0.1 3 5 2 3 5 7 7 2 3 1.0 -- g re -- c re c re -- pf f=100mhz v ce =--6v collector current, i c ma collector current, i c ?a pg, nf -- i d itr03127 -- 1.0 57 -- 10 7 23 35 20 24 28 32 0 2 4 6 pg nf see specified test circuit. f=100mhz v ce =--6v input admittance, y ie -- v ce g ie -- ms itr03123 -- 1.0 7 -- 10 7 22 35 1.0 2 3 5 3 5 7 2 10 c ie -- pf 2 3 5 10 1.0 2 3 7 5 output admittance, y oe -- v ce g oe -- ms itr03124 -- 1.0 7 -- 10 7 22 35 0.1 2 3 5 3 5 7 2 1.0 7 10 c oe -- pf 0.1 2 3 7 5 3 5 2 1.0 7 10 c oe g oe f=100mhz i c =--1.0ma f=100mhz i c =--1.0ma c ie g ie forward transfer admittance, y fe -- v ce g fe -- ms itr03125 -- 1.0 7 -- 10 7 22 35 1.0 2 3 5 3 5 7 2 10 b fe -- ms 2 3 5 10 1.0 2 3 7 5 reverse transfer admittance, y re -- v ce g re -- ms itr03126 -- 1.0 7 -- 10 7 22 35 0.1 2 3 5 3 5 7 5 7 2 1.0 c re -- pf 0.1 2 3 7 5 7 5 3 5 2 1.0 -- c re -- g re f=100mhz i c =--1.0ma f=100mhz i c =--1.0ma -- b fe g fe collector-to-emitter voltage, v ce v collector-to-emitter voltage, v ce ? collector-to-emitter voltage, v ce v collector-to-emitter voltage, v ce ? collector current, i c ?a power gain, pg db noise figure, nf db
ps no.1056-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2002. specifications and information herein are subject to change without notice. 2sa1256
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